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MMT10B350T3
THERMAL CHARACTERISTICS
Characteristic
Operating Temperature Range Blocking or Conducting State
Overload Junction Temperature ? Maximum Conducting State Only
Maximum Lead Temperature for Soldering Purposes 1/8 ″ from Case for 10 Seconds
Symbol
T J1
T J2
T L
Max
?40 to + 125
+ 175
260
Unit
° C
° C
° C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ m s, I SC = 1.0 A, Vdc = 1000 V)
(+65 ° C)
Symbol
V (BO)
Min
?
?
Typ
?
?
Max
400
412
Unit
V
Breakover Voltage (Both polarities)
V (BO)
V
(f = 60 Hz, I SC = 1.0 A(rms), V OC = 1000 V(rms),
R I = 1.0 k W , t = 0.5 cycle) (Note 3)
(+65 ° C)
?
?
?
?
400
412
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I (BR) = 1.0 mA) Both polarities
Off State Current (V D1 = 50 V) Both polarities
Off State Current (V D2 = V DM ) Both polarities
On?State Voltage (I T = 1.0 A)
(PW ≤ 300 m s, Duty Cycle ≤ 2%) (Note 3)
Breakover Current (f = 60 Hz, V DM = 1000 V(rms), R S = 1.0 k W )
dV (BO) /dT J
V (BR)
I D1
I D2
V T
I BO
?
?
?
?
?
?
0.12
350
?
?
1.82
475
?
?
2.0
5.0
5.0
?
V/ ° C
V
m A
V
mA
Both polarities
Holding Current (Both polarities) (Note 3)
V S = 500 V; I T (Initiating Current) = " 1.0 A
Critical Rate of Rise of Off?State Voltage
(Linear waveform, V D = Rated V BR , T J = 25 ° C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
I H
dv/dt
C O
150
2000
?
?
300
?
40
81
?
?
?
85
mA
V/ m s
pF
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
I D1 , I D2
V D1 , V D2
Off State Leakage Current
Off State Blocking Voltage
V TM
V (BO)
V BR
V BO
Breakdown Voltage
Breakover Voltage
I H
I D1
I D2
I (BO)
I BO
Breakover Current
I H
V TM
Holding Current
On State Voltage
V D1
V D2
V (BR)
+ Voltage
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